Dear Wenlin Jin,

Hope these references, discussing damage due to E-field will be of used to
you (and others):

        SchjØlberg-Henriksen K., Plaza J.A., Rafí J.M., Esteve J., Campabadal
F.,
Santander J., Jensen G.U. and Hanneborg A., “Protection of MOS capacitors
during anodic bonding”, Journal of Micromechanics and Microengineering, 12,
361-367, 2002

        SchjØlberg-Henriksen K., Hanneborg A.B., Jensen G.U., Lapadatu A.C. and
Jakobsen H., “Electrical effects of anodic bonding on silicon dioxide
situated in Pyrex cavities”, Journal of the Electrochemical Society, 149,
G497-G503, 2002.

        Li Z., Hao Y., Zhang D., Li T. and Wu G., “ An SOI-MEMS technology using
substrate layer and bonded glass as wafer-level package”, Sensors and
Actuators, 96, 34-42, 2002.

        Cozma, A., Jakobsen, H. and Puers, R.,”Electrical characterization
of anodically bonded wafers”, Journal of Micromechanics and
Microengineering, 8, p 69-73, 1998.


Ton van Helvoort
Cambridge, UK

>From: Wenlin.Jin@jdsu.com
>Reply-To: mems-talk@memsnet.org
>To: mems-talk@memsnet.org
>Subject: [mems-talk] anodic wafer bonding
>Date: Wed, 11 Sep 2002 08:45:15 -0400
>
>Hello:
>
>In anodic bonded chips, there exist electric charges in the bonding area.
>If the chip is an electro-static device, will these charges interact with
>electrical voltage applied?
>
>Your help is highly appreciated.
>
>Wenlin Jin
>
>
>
>
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