Dear Zigurts Majumdar,
at 450C the the CTE of the borofloat glass and Si is too different. At this
temperature you can have also problems with structural and viscoelastic
relaxation of glass. The best temperature for bonding is around 280C, where
the CTE of Si and glass are equal. Please read the article from Sensors and
Actuators A55 (1996) 201-209"
Best,
Menhard Kocsis


>>From: Zigurts Majumdar 
>>Reply-To: mems-talk@memsnet.org
>>To: mems-talk@memsnet.org
>>Subject: [mems-talk] borofloat -Si bonding
>>Date: Thu, 26 Sep 2002 16:15:07 -0500 (CDT)
>>
>>
>>Hi,
>>         I've read a paper where borofloat glass was anodically bonded
>>to an Si wafer with 1200 V at 450 C, I used 15N of force for
>>total area of about 1/3 of a 3 inch wafer. The glass cracks, I tried 3
>>times. Does anyone have any suggestions about a better protocol? I've
>>assumed the CTE is the same as Pyrex, which is true for the average
>>CTE from 20-300C, but I haven't seen the data at 450 C.
>>
>>Thanks,
>>
>>Ziggy
>>
>>********************
>>(Ziggy) Zigurts K. Majumdar
>>Department of Physics
>>Laboratory for Fluorescence Dynamics
>>University of Illinois at Urbana Champaign
>>1110 West Green St.
>>Urbana, IL 61801
>>********************
>>
>>
>>
>>
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KOCSIS Menyhert Menhard

European Synchrotron Radiation Facility
B.P.220
6rue Jules Horowitz
38043 Grenoble Cedex
France
Tel: +33 (0)476 882 543
Fax: +33 (0)476 882 542