Dear Mems Researchers,
I use KOH (prepared with prolabo powder) etching on Si (100) wafer, to
realize microreactors.
Here are the typical wet etching conditions : T=75°C, t=45min, KOH 40%M.
I do observe Fe particules (diameter < 500 nm) at the bottom of the
microreactors and suspect the KOH
product to introduce this pollution.
1) Does anyone have already observed this phenomenum ?
2) And do you have an idea to eliminate this pollution ?
Thanks a lot
 Best Regards,
David Peyrade