Hello everybody.

I would like to know if the p-doping of bulk Si could significatively change its
Young modulus. I've heard, for instance, that the Young modulus could be of
about 130GPa (instead of 170GPa) in the <100> direction but it seems to be a
little bit exaggerated.

Has anybody ever determined the Young modulus value for 10ohm*cm (p) doped
Silicon?

Thank you for your help,

Liviu