It seems Cr and Ti start to diffuse through Au at temperatures as low as 200-300C. Sputtered TiW and TiN (~1000A) should also be good barriers Regards Simone Capecchi Optical Engineer Terahertz Photonics Limited Rosebank park Livingston EH54 7EJ Tel :- 01506-818534 Fax :- 01506-818577 -----Original Message----- From: Xing Yang [mailto:xing@mems.caltech.edu] Sent: 23 October 2002 03:09 To: mems-talk@memsnet.org Subject: [mems-talk] Diffusion barrier for Cr/Au or Ti/Au In Au metalization process, the common adhesion layer Cr or Ti tends to diffuse through the Au layer, especially at high temperatures. A quick Google search shows that Pt or Pd has been commonly used as the diffusion barrier layer. I wonder if anyone has done any experiments or know any published papers on this topic. I am looking for information on what the diffusion barrier layers and their thicknesses have been tried and how effective they are. Any info will be appreciated. Xing Yang _______________________________________________ MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://www.memsnet.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.memsnet.org/