I am sputtering tin in a RF sputter process at
following parameters:
sputtering pressure: 2 Pa (gas is Ar)
Power: 300W at a distance of the electrodes of 20mm

The deposition rate at this parameters is 100nm/min.
But the surface is very rough due to the low melting
point of the tin.

Best regards,

        Thorsten Uelzen

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Message: 16
Date: Wed, 23 Oct 2002 09:52:33 +0100
From: "Haigh, Richard" 
To: 
Subject: [mems-talk] Sputter deposition of tin
Reply-To: mems-talk@memsnet.org


Dear Colleagues

I am looking to RF sputter a thin film of tin (100 to 300 nm) onto
either Si3N4 or Si. I wonder if anyone knows the deposition rate of this
metal and an appropriate voltage at which to deposit it?

N/B. The sputtering system has a base pressure of 1 E-6 Torr, a
sputtering pressure of 1 E-2 Torr and the gas is Ar.