Hi Xing, I have done tests on Cr/Pd/Au and Cr/Pt/Au layers, typically in the range of 15/50/300 nm thickness. Test that were done include anneal tests up to 400oC. Pd proofs to be a somewhat better anti-diffusion layer then Pt (based on color changes and sqaure resistance measurements) but both seem to work fine. A problem with Pd is that is has much more stress then a Pt layer. I also considered Ni, but never tried it myself (the problem was availability at that time, no functional reason). Niels Olij >-----Original Message----- >From: Neal Ricks [mailto:micromach@yahoo.com] >Sent: Wednesday, October 23, 2002 16:57 >To: mems-talk@memsnet.org >Subject: Re: [mems-talk] Diffusion barrier for Cr/Au or Ti/Au > > > >You may want to evaluate Nickel as well. > Xing Yangwrote: >In Au metalization process, the common adhesion layer Cr or Ti >tends to diffuse through the Au layer, especially at high >temperatures. A quick Google search shows that Pt or Pd has >been commonly used as the diffusion barrier layer. I wonder if >anyone has done any experiments or know any published papers >on this topic. I am looking for information on what the diffusion >barrier layers and their thicknesses have been tried and how >effective they are. > >Any info will be appreciated. > >Xing Yang > > > >_______________________________________________ >MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://www.memsnet.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.memsnet.org/ > > >--------------------------------- >Do you Yahoo!? >Y! Web Hosting - Let the expert host your web >site_______________________________________________ >MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://www.memsnet.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.memsnet.org/ >