Hi everyone,
I am using a three step etching process to obtain deep silicon structures.
During the process, I used H2 and CF4 to generate teflon layer to
passivate the sidewalls during the etching. After wet etching of the
sacrifical layer, I used critical dryer to dry my sample. However, strange
situation happened after the drying: all the deposited teflon layers come
off from the sidewalls, and make all the things really messy. Does anyone
of you know how to deal with this problem? I am wondering if there is any
solvent to dissolve the teflon layers.
Thanks for any help or suggestion!

Peng Yao
DOEs lab
Electrical Engineering Dept.
Univeristy of delaware
Newark D.E 19716