durusmail: mems-talk: Re: DRIEetch of highly doped silicon wafers
Re: DRIEetch of highly doped silicon wafers
2002-11-12
minifabs
2002-11-13
2002-11-14
Re: DRIEetch of highly doped silicon wafers
Masa Rao
2002-11-12
Serdar,

    We've been etching heavily B-doped Si wafers (resistivity < 0.02 ohm-cm) on
a Plasmatherm SLR 770 for a while now.  No noticeable difference in etching
behavior relative to normal Si.  Don't understand why you would need the anti-
notching feature if you're not working with SOI though.

Masa Rao


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Masa Rao                                             Post-Doctoral Researcher
tel:  (805) 893-6108                                Dept. of Mech. & Env. Eng.
fax: (805) 893-8651                                University of California
cell: (805) 452-4098                               Engineering 2, Rm 2355
email: mprao@engineering.ucsb.edu       Santa Barbara, CA  93106
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