Hi,
  Consider using a negative resist if your nitride is particularly
thick. We use CF4 and H2 for plasma etching.

-Mike

>>> ml@disassemble.org 11/08/02 11:09AM >>>
Hi everyone,

I am a newcomer to RIE etching,
 any suggestions of particular photoresists to use as masks
 for RIE etching of Silicon Nitride, to give highest selectivity,
 or will they all be about the same?

In terms of gases, based on literature and conversations, it
 sounds like SF6 chemistries should give much better PR to SiNx
 selectivity, maybe with some O2 for speed or CHF3 to help
 passivate the sidewalls, sound reasonable?

In terms of PR stripping, should just an O2 plasma work, or
 will I need to do a wet strip? Avoiding wet processing
 would be nice.

Thanks!
Maxwell

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