Tram,

I am wondering why you would need to clean your device after HF vapor etching?
You can remove the sacrificial oxide from the field with BOE leaving the support
oxide under your device.  You can then rinse and dry the device and then vapor
etch the
remaining oxide in the vapor leaving it released and dry.

You can refer my patent on this process "Method of HF Vapor Release of
Microstructures".

Bob Cole
The Aerospace Corporation



                      "tram x"
                                         cc:
                      Sent by:                 Subject: [mems-talk] HF-vapor
etch cleaning
                      mems-talk-admin@
                      memsnet.org


                      11/13/02 09:21
                      AM
                      Please respond
                      to mems-talk







Hello my freinds,

Can somebody explain me of how the cleaning is made after etching in
HF-vapor phase? Since sticking wants to be avoided i guess that water
cleaning cannot be made. Is there some water vapor cleaner inside the
system?

Please for all answers.

Tran




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