Hi,

I made KI2:I2:H2O (4 g  KI, 1 g  I2, 200 ml  H2O) etchant for Au and
measured etch-rate about 80 nm/min. About a week later a etched with the
same solution and measured the etch-rate to be about 20 nm/min...Why?

I used PMMA mask, which unfortunately seemed to decrease during etching...
Anyone know about PMMA compatibility with these:
1) Au-etchant (4 g  KI, 1 g  I2, 200 ml  H2O)
2) Cr-etchant (1 osaa [50gNaOH+100mlH2O]: 3 osaa [30g K3Fe(CN)6+100mlH2O])
3) SiO2-etchant (28 ml (49 %) HF, 170 ml H2O, 113 g  NH4F)?


Thanks,

        Sampo Tuukkanen


_______________________________________________________
Sampo Tuukkanen, Room K215, Department of Physics,
PB 35 (YFL), FIN-40014 University of Jyväskylä, FINLAND
E-mail: sampo.tuukkanen@phys.jyu.fi
Tel: +35814 260 2392, Fax: +358 14 260 2351