Hello dear Patrick,
that depends on the requirements of your device. Depth of etching, profile
slope, sidewall roughness, isotropic or anisotropic?

burkhard
-----Ursprüngliche Nachricht-----
Von: foo foo 
An: mems-talk@memsnet.org 
Datum: Montag, 25. November 2002 17:30
Betreff: [mems-talk] Etching Si with SiO2 as mask


>Dear all
>
>I am interested in etching Si with SiO2 as an etch mask. Does anyone know
of
>a good wet or dry process?
>
>All sugestions are highly apricitated
>
>Patrick
>