Hi,

Does anyone have experiences with Au-Si bonding?I have done  expriments for
several times under different temperatures(from 350oC  to  420oC),but bad
results:(.What are there others reasons that influence on bonding quality except
temperature,totle thickness variation? The most I am wondering is the wafer
surface,but I still have no idea to pretty solve it,and I wish it has >80%
bonding possibility.
And any advice will be appreciated.

Best Regards

liubei

liubei@ime.pku.edu.cn