The PSG may be outgassing.  It is good practice
to anneal the PSG glass underneath a polysi or
nitride layer at a temperature equal to or higher
than the temperature the glass was deposited at.
Outgassing is really a problem with high concentrations
of phosphorus.






>Dear guys,
>
>Any body has relative experiences on Poly-PSG deposition?
>
>Film information:
>Lower: PECVD PSG --> 950C, annealing
>Upper: LPCVD Poly-Si --> 950C, doping ---> 1050C, annealing
>
>Problem list:
>(1) We have the peeling problem during the Poly doping or annealing. Does
>any body know why this happen?
>(2) Is this problem can be prevented by reflow PSG in advance? The reflow
>temperature is ?
>(3) How about doping and anneal Poly-Si in the same time?
>
>Thank You!!
>
>Yi-Ping Ho
>
>
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