Liubei,

MIT is successfully bonding Au-Si with an EVG501 wafer bonding system - check
out http://www.electrochem.org/meetings/past/200/abstracts/symposia/p1/1471.pdf

Looking forward to hearing from you soon.
With very best regards,

Helge W. Luesebrink

EV Group, Inc. - Regional Sales Manager -Tel: (401) 784 0008; Fax: (401) 784
9933; e-mail: H.Luesebrink@EVGroup.com ; Web site: www.EVGroup.com



-----Original Message-----
From: bei [mailto:liubei@ime.pku.edu.cn]
Sent: Friday, December 20, 2002 1:41 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] au-si bond


Hi,

Does anyone have experiences with Au-Si bonding?I have done  expriments for
several times under different temperatures(from 350oC  to  420oC),but bad
results:(.What are there others reasons that influence on bonding quality except
temperature,totle thickness variation? The most I am wondering is the wafer
surface,but I still have no idea to pretty solve it,and I wish it has >80%
bonding possibility.
And any advice will be appreciated.

Best Regards

liubei

liubei@ime.pku.edu.cn


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