> -----Original Message-----
> From: Stefan Junge [mailto:sjunge@imsas.uni-bremen.de]
> Sent: Wednesday, January 15, 2003 7:01 AM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Dry strukturing of tungsten with PR as mask
> Dear all,
> i want to structure tungsten dry with PR as masking layer.
> Does anybody have experiences on etchrates, selectivities
> to SiO2. I thought about CH4, SF6 or Ar as gases.
> Regards,
> Stefan Junge

Here is some measured data:

Tegal Inline Plasam 701 etcher (parallel-plate configuration),
125 W, SF6, 150 mTorr, 40 C.
W etches at 280 nm/min; LTO at 120 nm/min; photoresist at 240 nm/min.

        --Kirt Williams Agilent Technologies