Patrick,
        I have seen lift off using a standard resist process that gave 800
Angstrom lines and spaces.  In case you wish to try standard reversal lift off
processes I have attached 3 technical papers on the process and can help with
practical demonstrations in needed Bill Moffat

-----Original Message-----
From: Patrick Carlberg [mailto:patrick.carlberg@ftf.lth.se]
Sent: Monday, February 10, 2003 2:54 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] LOR lift-off


Dear all,

I am working with nanoimprint lithography to create sub 100nm
structures. For metal lift-off I use a double layer resist scheme PMMA
on LOL. It works fine. We are now changing from LOL to LOR and I have
some trouble with the reproducibility. I suspect that it has to do with
different solubility in the LOR from time to time.  I use diluted MF
319 as the developer. And the resist thickness is about 70nm. I prebake
at 180C for 30min. Does anyone have any experience working with LOR?
Have any one had similar problems?

Best regards
Patrick
------------------------------------------------------------------------
------
Patrick Carlberg
Ph.D.cand., M.Sc.Phys.
Biophysics & -nanosensors

Mail Address:
Division of Solid State Physics
Lund University
P.O. Box 118
221 00 Lund
Sweden

Delivery Address:
Sölvegatan 14
223 62 Lund

Visiting Address:
Professorsgatan 1

Phone:  +46 46 2224495
Fax:            +46 46 2223637
E-mail: patrick.carlberg@ftf.lth.se
URLs:   www.nano.ftf.lth.se, www.ftf.lth.se


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