SiN can be etched easily by hot H2PO3 at 135C(Phos acid).

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of Patrick Carlberg
Sent: Thursday, March 13, 2003 1:15 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Etching of SiN


Dear all,

Could anyone tell me how what to use for dry and wet etching of SiN
grown in PECVD (So there is probably some H in ther as well)

Thanks
Patrick Carlberg
__________________________________________________
Patrick Carlberg, Ph.D Student, MSc
Lund University, Solid State Physics/Nanometer Consortium
Box 118, SE-221 00 LUND, Sweden

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e-mail: patrick.carlberg@ftf.lth.se
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