Dry etch: We use a mixture of Hydrogen and CF4 (I don't remember the
flow rates) 400 W RF at 13 MHz and 200 mTorr.

-Mike

>>> patrick.carlberg@ftf.lth.se 03/13/03 01:14AM >>>
Dear all,

Could anyone tell me how what to use for dry and wet etching of SiN
grown in PECVD (So there is probably some H in ther as well)

Thanks
Patrick Carlberg
__________________________________________________
Patrick Carlberg, Ph.D Student, MSc
Lund University, Solid State Physics/Nanometer Consortium
Box 118, SE-221 00 LUND, Sweden

Delivery address: Sölvegatan 14, SE-223 62, LUND, Sweden
Visiting address: Professorsgatan 1, SE-221 00, LUND, Sweden

Tel:       + 46 46 222 44 95 (office)
Fax:      + 46 46 222 36 37
e-mail: patrick.carlberg@ftf.lth.se
URL: http://www.ftf.lth.se/, http://www.nano.ftf.lth.se
___________________________________________________

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