Shweta,

If your photoresist must sit on any kind of oxide layer during a 4um etch in
HF of that or other oxides, the resist will certainly peel off.

You need to find a way to have the edge of the resist patterns resting on
either a metal or on native oxide-free bare silicon, then you have a chance.

Otherwise I think you're only other try would be to use some sort of
specific metal adhesion layer underneath the resist as part of the masking
process.

The extra time in BOE over HF has a chance of being offset by the fact that
BOE will have less tendency to undercut and peel the resist.
-Justin

Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc.
jborski@advancedmicrosensors.com
www.advancedmicrosensors.com



-----Original Message-----
From: jingliu [mailto:jingliu@umd.edu]
Sent: Monday, March 17, 2003 6:02 PM
To: shweta@ece.gatech.edu; General MEMS discussion
Subject: Re: [mems-talk] HF attack of PR Shipley 1813


Shweta,

I will not worry about survival of 1813 in HF. Instead, I'll pay attention
to photoresist peel off from the substrate.

Jing Liu

----- Original Message -----
From: "Shweta Humad" 
To: 
Sent: Friday, March 14, 2003 11:16 AM
Subject: [mems-talk] HF attack of PR Shipley 1813


> Hi all,
> I was thinking of a process which would involve a last step of HF wet
> etching to create 4 micron deep trenches in silicon. I'm not sure how
> long the photo resist can withstand the HF. The photo resist would be
> Shipley 1813. I could use BOE also instead of HF but that would take
> even longer. Has anyone does this before?
>
> Thank you
> --
> Shweta Humad
> Office: (404) 385-4306/2400
>
>
>
>
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