Can anyone let me know where I can find a good paper on Anodic Bonding..Trying
to do the anodic bonding at device level for the first time..so need info on the
procedure involved ...
- Are there any restrictions on the type of  Oxidation ( Thermal or PECVD)  that
Si wafer should have..
- What wafer thickness and oxide thickness would be ideal. ?
- What voltage and temperatures ?
- Significance of the mechanical pressure...?
- Is vaccum a must ?
Any other info that u can give to get a good bonding would be of great help !
Thanks in advance.
MEMS_GREENHORN


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