Hello MEMS-Greenhorn! the standard material configuration for Anodic Bonding is typically Silicon and sodium rich glass or two Si wafers, one of those with a thin sodium rich glass layer. - typically the Si wafer is not oxidized at all (except the native oxide). Above a certain deposited oxide layer thickness the bonding process will be prevented due to electric isolation effect. - standard Si wafers (200-600 µ)with native oxide + Pyrex (200-600µ)-> bonding parameters can be adapted to the substrates - 500-2000V, 300-450 °C -> wide process window - depends on bow, warpage and relative bond contact area of the substrates - vacuum is for anodic bonding not relevant, it depends on your device -> for special pressure range in sealed cavities bonding in Vacuum is necessary. Regards, Markus. SUSS MicroTec Markus Gabriel Product Specialist Schleissheimer Str. 90 85748 Garching Germany Fon +49 89 32007 - 313 Fax +49 89 32007 - 162 email m.gabriel@suss.de http://www.suss.com ------------------------------ Message: 5 Date: Tue, 17 Jun 2003 16:34:13 -0700 (PDT) From: mems greenhornSubject: [mems-talk] Anodic Bonding To: mems-talk@memsnet.org Message-ID: <20030617233413.72220.qmail@web20708.mail.yahoo.com> Content-Type: text/plain; charset=us-ascii Can anyone let me know where I can find a good paper on Anodic Bonding..Trying to do the anodic bonding at device level for the first time..so need info on the procedure involved ... - Are there any restrictions on the type of Oxidation ( Thermal or PECVD) that Si wafer should have.. - What wafer thickness and oxide thickness would be ideal. ? - What voltage and temperatures ? - Significance of the mechanical pressure...? - Is vaccum a must ? Any other info that u can give to get a good bonding would be of great help ! Thanks in advance. MEMS_GREENHORN ____________________________________________