CHF3 with a little, e.g. 20%,  O2 will plasma etch silicon nitride with good
selectivity to resist.  An added bonus is that  the etch will virtually stop
on Si.

Roger Shile

----- Original Message -----
From: "Jun Chen" 
To: 
Sent: Tuesday, July 29, 2003 8:25 AM
Subject: [mems-talk] Si3N4 Dry etch with good selectivity


> Hi,
>
> Any experte can give some suggestions about how to dry etch
> 800-1000 A Si3N4(made by PECVD 330C) with good selectivity
> with photo-resist AZ4110 10000 A. We don't want to etch many
> resist,because it will kill the performance. We tried SF6
> (Unaxis system), it etched many resistor. Any suggestions
> will be appreciated.
>
> Thanks a lot!
>
> Jun Chen
> Email: jchen@mwtinc.com
> Phone: 510-651-6700x102
>
>
>
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