I am making pressure sensor with NiCr pattern. I am depositing NiCr on patterned PR in order to pattern metal by lift-off. Currently, my sputtering machine seems to have a leak from someday. So, oxygen seems to fall onto the wafer with NiCr. The problem is this O2 layer is sandwiched between NiCr and substrate, so the NiCr pattern is gone in TMAH etchant when I immerse the wafer to THAM in order to etch backside to remain membrane with NiCr on it. At first time, there was no attack on NiCr since TMAH hardly attack NiCr. But now, since NiCr is on top of O2 layer, NiCr seems to be gone with O2's removal in TMAH. Although I can use a protective holder for the NiCr pattern in TMAH, the resistivity of NiCr may not be same as before, since it contains O2, so the holder cannot be an essential solution. Is there any method to get rid of O2 except fixing the sputtering machine? Thank you for your help in advance. Sincerely, --------------------------------------------------------- Byunghoon Bae Visiting scholar Mechanical & Industrial Engineering Univesity of Illinois at Urbana-Champaign 26 MEB MC-244 1206 W. Green St. Urbana, IL 61801 Tel: 1-217-244-7301, Fax: 1-217-244-6534 E-mail: bhbae@uiuc.edu Ph. D. candidate Dept. of Mechatronics Kwangju Inst. of Science and Technology(K-JIST) ¸¶À½¼ö·Ãȸ ȸ¿ø Member of mind(maum) meditation center -¸¶À½Àº Çϳª, ¸¶À½Àº ¸ðµç °Í Âü³ª¸¦ ã¾Æ, ¼ø¸®ÀÇ ®À»- -Mind is one, mind is everything Taking the path toward the truthful life- Mind meditation center: Korean: http://www.maum.org English: http://211.47.66.148/eng/ Japanese: http://www.kokolo.org