Hi,
Can someone recommend me a reliable method to do the
de-embedding of rf-mems switch measurements?
I have tried to follow the paper :"A three-step method
for the de-embedding of high frequency s-parameter
measurements", by Cho and Burk, but wonder if that is
valid for mems devices.
I have series and shunt capacitive mems-switches on a
lossy substrate.

Thanks in advance.

Regards,
Kaustubh.



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