Hi Kaustubh, In general, de-embedding is an art, not a science. It should be avoided whenever possible. The best technique strongly depends on the exact device (including all pads and interconnects) you are measuring since you are de-embedding to remove the effects of specific portions of your overall structure. Also, it is all too easy to remove effects that are actually aspects of a design or process that cannot removed, thus providing an overly optimistic assessment of device performance. Cho and Burk is aimed at transistor modeling. If your layout and substrate parasitics are similar to the bipolar transistors they were modeling, taking this whole is a reasonable approach. If not, then you need to have the right "calibration" structures to derive the de-embedding elements. Note that the actual device they were modeling was much smaller than the gap between tranmission lines so that they removed a substantial shunt inductance by putting the stub in all of their calibration structures. Typically, a MEMS switch should only be deembedded between uniform transmission line planes since that is the way it would usually be used in an RF system. If you de-embed all the way down to just the basic bridge or cantilever, the results are only narrowly useful. Best of luck! Art Arthur S. Morris III, Ph.D. art.morris@wispry.com CTO, VP Eng. v: 1-919-657-8101 wiSpry, Inc. f: 1-919-854-7501 4001 Weston Parkway, Suite 200 http://www.wispry.com/ Cary, NC 27513 > -----Original Message----- > From: mems-talk-bounces+art_morris=ieee.org@memsnet.org > [mailto:mems-talk-bounces+art_morris=ieee.org@memsnet.org]On Behalf Of > mems-talk-request@memsnet.org > Sent: Wednesday, September 03, 2003 12:02 PM > To: mems-talk@memsnet.org > Subject: MEMS-talk Digest, Vol 11, Issue 2 > > ------------------------------ > > Message: 6 > Date: Wed, 3 Sep 2003 06:22:38 -0700 (PDT) > From: kaustubh bhate> Subject: [mems-talk] de-embedding mems switch measurements > To: mems-talk@memsnet.org > Message-ID: <20030903132238.40892.qmail@web41106.mail.yahoo.com> > Content-Type: text/plain; charset=us-ascii > > Hi, > Can someone recommend me a reliable method to do the > de-embedding of rf-mems switch measurements? > I have tried to follow the paper :"A three-step method > for the de-embedding of high frequency s-parameter > measurements", by Cho and Burk, but wonder if that is > valid for mems devices. > I have series and shunt capacitive mems-switches on a > lossy substrate. > > Thanks in advance. > > Regards, > Kaustubh. > > > ****************************************