Adam Cohen wrote:
>
> Dear Colleagues,
>
> We are interested in using dry etching (RIE or ECR) to pattern cured silicone
rubber.
>
> Our first attempt was with using oxygen in our RIE system, but even at high
power we obtained very little etching.
>
> Does anyone know whether a different gas (e.g., containing fluorine) might
provide more vigorous etching?
>
> Your comments are much appreciated.
>
> Sincerely,
>
> Adam Cohen
> USC
>


With an oxygen plasma, you will form a passivating layer of SiOx that
will prevent further etching.  I use CF4/8% O2 and can easily etch
silicone.  The fluorine radicals will etch the Si.  A photoresist mask
will etch fairly quickly so you will need to make sure the resist is
thick enough.

--
Winston Chan                            | phone: (319) 353-2398
Dept. of Electrical Engineering         | fax: (319) 353-1115
University of Iowa                      | email: wkchan@icaen.uiowa.edu
Iowa City, IA 52242