Actually, you could compute the temp of the wafer to the first order by
simply computing the Weight of aluminum from the thickness, diameter, and
density of the aluminum, then take the latent heat of vaporization and the
specific heat of silicon.  That will yeild an equlibrium temperature
assuming that there is no heat loss, one can then assume some losses and
estimate the temperature.  Of course the heat losses go up with time so
that if you took a longer time to deposit the heat loss term would tend to
dominate.  Gary

Gary Hillman
Service Support Specialties, Inc.
9 Mars Court
PO Box 365
Montville, NJ 07045
973-263-0640
973-263-8888.



-----Original Message-----
From:   MT Klaus Beschorner [SMTP:metal@caby.de]
Sent:   Saturday, February 07, 2004 7:47 PM
To:     mems-talk@memsnet.org
Subject:        [mems-talk] What could be wafer surface temperature

 >   10. What could be wafer surface temperature during sputter
 >       deposition w/ Al deposition, 10000W, 150sccm Ar flow,  12min
 >       deposition time? (Cheol Han)

The wafer surface is where vapour phase Al condenses to the solid state,
so as an estimate you can use the boiling point of Al.

If what you really mean is the substrate temperature, without active heat
sinking (backside gas), a 2?m Al deposition in 1.5 min. has been measured
to heat a standard wafer from room temp. to over 550 C.

best regards,
klaus

--
Klaus Beschorner
Metron Technology Europe, PVD (Eclipse) Process Manager
Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683



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