Dear all:

I would like to use phosphoric acid at 185 centigrades to strip the nitride
layer which is on my polysilicon layer.
Does anyone know how the selectivity of the phosphoric acid between nitride
and polysilicon?
What are the respective etching rate?
I hope that the phosphoric acid can remove the nitride without damaging the
polysilicon.
Does this method work (phosphoric acid, 185 centigrades)?

Please give me some advice.
Thank you very much!

Regards,

Y.C. Lin
+886939682120
Dept. of Power Mechanical Engineering, National Tsing Hua University,
Taiwan.