Hi all!



In my process I would like to etch-away an entire 600-micron thick silicon
wafer. Isotropic etch process that does not involve HF would be quite
preferential.



My wafers are Boron-doped (I am open to using other type of wafers are long
as they are fairly inexpensive). In the "device" I have Copper, SU-8
photoresist, a little Crome, and a glass wafer. Layers are (in that order):



Silicon wafer (600 um)

Crome (100 nm)

SU8 - Copper - SU8 (10 um)

Glass (800 um)



Again, I am open to using other wafers or switching glass and silicon wafers
to etch glass instead. I would much rather do this in my lab and not go to
clean room for this (purity is not important at this moment). For this
reason I would prefer to stay away from plasma etch systems or HF-involving
processes. Something like KOH would be nice, but something that does not
depend of dopants and is faster than KOH and is isotropic would be highly
preferred.



Thank you very much for any help!



Greg F.