Hi Paul, One of the quick and dirty fix would be to have multiple cycles with different etch:passivation time ratio combinations. For example, start with 4s:5s -> 5s:5s -> 6s:5s. Problem of this approach is that you may not have gradual profile transition between cycles. Or try to reduce passivation, i.e. reduce C4F8 flow. You can try to change the power, but I would start with the flow. This may cause bowing. (instead of nice and straight negative profile) But you should be able to have larger backside CD. This is the general direction I would go for. I would recommend you to run a mini DOE to find the process window before start fine tuning the recipe. Good luck! ShuTing ShuTing Hsu Graduate Student Researcher Integrated Photonics Laboratory UCLA EE Department 420 Westwood Plaza, 63-128 Eng 4 Los Angeles, CA 90095 Tel: (310) 825-7338 Fax: (310) 794-5513 Email: shuting@icsl.ucla.edu -----Original Message----- From: mems-talk-bounces+shuting=ucla.edu@memsnet.org [mailto:mems-talk-bounces+shuting=ucla.edu@memsnet.org] On Behalf Of Paul Elliott Sent: Friday, April 23, 2004 11:54 AM To: mems-talk@memsnet.org Subject: [mems-talk] Re: Re: STS ASE etch help Can you advise any parameters to control sidewall angle of a 500um thru wafer etch? I need to obtain a negative sidewall profile no greater than 1 degree across a 4" substrate with varying diameters(~150um dia.). Eric Milleradvised maybe the ICP power and/or the pressure are major contributors. My intial posting is below. Thanks in advance for any advice, Paul Sent: Tuesday, February 10, 2004 7:02 AM Subject: [mems-talk] DRIE sidewall angle >What is the expected tolerance for sidewall angle when DRIE 'etching a >Si substrate 500um thick? > >I need to etch an arrayed die pattern consisting of two holes 125um and >155um diameter. The two holes are spaced 150 um apart and the die are ~1mm >apart. I want to etch 125 um diameter hole through the 500um thick >wafer and obtain a negative sidewall profile no greater than 1 degree >and a backside hole diameter of 125um +17um / -0um. Likewise, I need >the 155um diameter hole to have a negative sidewall profile no greater >than 1 degree and a backside hole diameter of 155um +17um / -0um. > >Thank you in advance for any guidance, > >Paul _________________________________________________________________ Test your 'Travel Quotient' and get the chance to win your dream trip! http://travel.msn.com _______________________________________________ MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.memsnet.org/