Dear all,
            I have got the linear I-V curve for my pattern of Ni/Au(20nm each)
deposited on p-GaN and then oxidised at 500 C for 20 min.
I have three concentric rings in my pattern with increasung gaps.
I have measured R1 for the first two rings by taking just the inverse slope of
the I-V plot. Then R2 for next two rings and then End contact resistance(Re)
with all the three rings and here again I took the inverse slope of the I-V
plot.And then i put the values in the given model for CTLM pattern by Dr.G.K.
Reeves.
Did i commit any mistake in that because i am not getting the good values of the
specific contact resistance.If yes then where and what is the remedies.
Thank you for going through this problem. Please suggest me.

With Regards
Hare Krishna



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