durusmail: mems-talk: Oxide growth
Oxide growth
2004-12-02
2004-12-05
Oxide growth
vic kley
2004-12-05
Carbon nanotubes are not compatible with coventional SiO2 growth since
carbon will react with the oxygen to make CO2 and "clean" off the nanotubes!
SiO2 arc deposit or a two step Si coat followed by an oxide formation might
work if the nanotube was properly protected. Alternately an alumina or other
gate material may work for you.

Vic


----- Original Message -----
From: "Sunkook Kim" 
To: 
Sent: Thursday, December 02, 2004 1:58 PM
Subject: [mems-talk] Oxide growth


> Dear everyone..
>
> May I ask you a favor?  Now, I want to grow oxide or thin film gate
> dielectric for carbon nanotube transistor since facility in our school
> had poor quality to grow thin film.
> If you know company, could you let me know it?
>
> It will be great help for me  and my research.
>
> Thank you so much, SK
>
>
> _______________________________________________
> MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/
>
>



reply