Carbon nanotubes are not compatible with coventional SiO2 growth since carbon will react with the oxygen to make CO2 and "clean" off the nanotubes! SiO2 arc deposit or a two step Si coat followed by an oxide formation might work if the nanotube was properly protected. Alternately an alumina or other gate material may work for you. Vic ----- Original Message ----- From: "Sunkook Kim"To: Sent: Thursday, December 02, 2004 1:58 PM Subject: [mems-talk] Oxide growth > Dear everyone.. > > May I ask you a favor? Now, I want to grow oxide or thin film gate > dielectric for carbon nanotube transistor since facility in our school > had poor quality to grow thin film. > If you know company, could you let me know it? > > It will be great help for me and my research. > > Thank you so much, SK > > > _______________________________________________ > MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.memsnet.org/ > >