Hello,

I work on the deposits of silicon oxynitride by pecvd at 200C, after RBS
analysis, the layer obtained is nitride dominated (SiO0.55N0.95).
Mechanically, the obtained stress is compressive (about -100Mpa). After
500C annealing, the film obtained is tensile (+100Mpa), but remains
disordered considering the low temperature of annealing for organizing the
film. One thus carried out an annealing with 800C, but with such a
temperature, the deposited layer is cracked.
I would like to know if the delaminating is due to the high nitride ratio
in the film, and if there is an articles or thesis treated the subject.

Thanks for help,
Mohamed SAADAOUI