Hello colleagues:
I used rie (10% O2, 90% CF4) to etch silicon with a polymer layer and a sio2
mask, but found the left sio2 cannot be further etched away with HF. I
searched the archive and found the RIE may generate a polymer layer or
fluorocarbon, and a layer of fluorinated si. I want to know is there any way
to remove the left sio2 mask? Thanks.

Regards,
Yilei Zhang