Dear All,

I am going to be etching a thin gold masking layer (< 100nm) and have seen
that the solution 4g:1g:40ml of KI:I2:H2O will wet etch at about
1micron/min, dependent on temperature. I would ideally like to etch slower
than this and was wondering if simply diluting the solution further will do
the job, and if so, is there a known dependence of rate with dilution or do
I just use trial and error? Ideally I'd like to etch at a rate of the order
of 20-50nm/min. Also, how does temperature affect the rate as I may have to
perform the etch around 40-50C, although this may not be essential if it
causes problems?

Thanks,

Martyn Gadsdon.