Hello all,

I'm finally going to spin-coat 1 micron S1813 photoresist on my sample to form a
mask for future DRIE etch of silicon (Bosch process).

My photomask (for test purpose) includes open regions of 2 microns wide (to be
etched) separated from each other by 1 microns (for the shortest dimensions). I
would like these patterns to be transferred the most accurately to the
photoresist (vertical wall).

I so need to optimize the exposure time. Does someone have an idea of this time
(with and without Gline filter in Model 200 Tabletop Aligner)?

Another unknown is the S1813 selectivity in Bosch process (ASE STS DRIE).



Thank you,


Julie.