Linas,

Hi.  You might want to try cleaning out the etching chamber.  O2 based
RIE etching of LCP will, over time, build up residue in the etching
chamber itself which can impede etching.

Sincerely,

Robert Dean
Auburn University

>>> ljauniskis@foster-miller.com 10/13/2005 12:50:43 PM >>>
I am working with a RIE machine O2 etching a thick layer (50um) of an
organic (LCP). After etching through most of the depth, there is a
black
residue left on the sample. My guess is this is oxidation byproducts
from the etch - anyone know with more certainty?

If that's it, what would help sweep the residue out? Increased flow
rate? On this system it appears that all I can do there is hook up a
higher capacity pump in order to increase gas flow rate while keeping
the pressure in the same range.