Dear colleagues:
I want to construct a silicon nitride microbridge above the Si
substrate. Polyimide is used to be the sacrificial layer. The silicon
nitride structural layer is deposited in magnetron sputtering or PECVD
method. Could anyone give me some imformation on sputtering silicon
nitride or deposit it in PECVD method on polyimide layer? And, more
important questions:
1. Is there anyone know the relation between stress level of silicon
nitride and the process parameters in magnetron sputtering SixNy?
2. Is the phase of the silicon nitride target (alpha-SixNy and
beta-SixNy) very important in sputtering SixNy? Does the phase influence
the mechanical strength of the silicon nitride layer deposited?
3. Is the silicon nitride film deposited in PECVD method the suitable
structural layer in MEMS? Are there any microscopic differences between
PECVD film and sputtering film?
Any information will be sincerely appreciated. Thank you all in advance.

Name: Ma Bin
Organization: Shanghai Institute of Technical Physics, The Chinese
Academy of Sciences
E-mail: mabin@online.sh.cn