Dear all,

We are trying to etch sputtered films such as Y2O3 and Al2O3 for a
thickness of about 1 micron. We plan to use chlorine chemistry in our
RIE (Plasmalab System 100 ICP) for that purpose. Related to this task we
would appreciate any feedback on the following issues: Any starting
parameters for RF power, ICP power, specific gases that could enhance
the etching.

Moreover, as a mask material we consider using Ni. Any figures of
selectivity would be helpful. If someone has the etch rate difference
between the sputtered and evaporated Ni films this would be very helpful
as well.
Thanks in advance.

Feridun Ay and Jonathan Bradley

MESA+ Institute for Nanotechnology
Faculty of Electrical Engineering
University of Twente