Dear all, I am trying to develop a MEMs process using SOI wafers. I am making membranes successfully using a TMAH wet etch but am having problems stripping the protective SiNx coating from the device layer once the membrane is fabricated. Once the membranes are fabricated I remove the Buried Oxide completely with a wet etch - at this point the membranes appear unstressed (looking at them by eye). I then use a dry CF4 plasma etch to remove the nitride - this will obviously etch the Si too - I try to time this etch carefully but there is always some etching of the Si underneath. After this step the membranes appear to be significantly stressed. Is this expected? I can't see how the dry etch could introduce stress in the membrane but I am ready to be corrected if anyone else knows otherwise... Is this problem likely to be solved by using a wet etch (hot phosphoric acid) or do I need to look for an alternative cause for the stress? Any help will be much appreciated. James Ransley jhtr2 (at) cam.ac.uk