there seems to be large series resistance beteen my silicide and
interconnect metal. I use Ni silicide, followed by PECVD nitride
passivation. After opening nitride window using RIE, Al interconnect
metal was sputtered.
        I suspect silicide/Al has poor adhesion or has interface layer
inbetween which reduced device conducting ability.
        Anyone has similair experiences? Any idea how to achieve clean and
good adhesion to interconnect metal?
        It seems that silicide process doesn't allow cap layer(like TiW,
TiN) to be used or someone tried that?

Yuzhu