An old recipe for ohmic contact to silicon is about 1 micron of about 99% Al, 1% silicon (to prevent electromigration caused by heavy current density during operation). Anneal in a furnace tube at 450C nitrogen, hydrogen, (or a mixture thereof) for 30 min. The standard wet etch (phosphoric, acetic, nitric) will leave a silicon residue sometimes referred to as "freckles". A light silicon etch (nitric, HF, acetic, H20) will remove the silicon residue. Don't try this clean up unless you have SiO2, nitride, resist or something protecting everything except the aluminum leads and bonding pads if used. Roger Brennan 3060 Reuben Drive Reno, NV 89502 Home: rogerbr@earthlink.net Home: 775-825-3060 Applications Director Solecon Labs 770 Trademark Drive Reno, NV 89521-5926 Work: roger@Solecon.com Work: 775-853-5900 ext 108 -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]On Behalf Of Kamesh Sent: Thursday, February 02, 2006 3:22 PM To: General MEMS discussion Subject: [mems-talk] Ohmic contact to Silicon Hi All, I am fabricating a P+Si/P GaAs heterojunction diode. I have read that Ti/Al can be used to make an ohmic contact to Silicon. Can anyone please advise the thickness of Ti and Al and the time/temperature of anneal ? Is the anneal to be carried out in an RTA oven ? Thanks you. Regards Kamesh