Hi Oliver, I deposite 200nm Pt on Si with 50A Ti adhesion layer via e-beam evaporator and then put that into HF solution. Pt was removed (peeled off) after several minute. Is that difference coming from machine we used? Thanks Jeehwan -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of Oliver Horn Sent: Thursday, August 03, 2006 12:30 AM To: General MEMS discussion Subject: Re: [mems-talk] Pt on Si Hi Kim, I did variations from 125 to 250 nm Pt, directly sputtered on fresh HF-dipped Si. It survived a lithography step and wet chemical etching. But don't use an ultrasonic bath!