Hi Guys, I am trying to make two layers of Su8-2100 on a Si-Wafer. The first layer is the base structure for the microchannel the dimensions being 2.5mm x 150um x 5cm (W x H x L). The second layer is of same width and length, the difference being the height of microstructures, which is 50um. The procedure that I currently follow is outlined below :- - First spin the SU8 on the wafer and coat a 150um layer. Then do the soft bake, expose, then do the post exposure bake and finally develop. - Now spin the second layer of SU8 for a thickness of 200um. This is done assuming that the first layer structure is 150um and I need 50um structure on top of that layer. So am spinning as if I am making a 200um layer. -The Soft bake, exposure and the post exposure bake are all calculated for 200um thickness. I just want to know if the procedure that I am following is correct?. If not, what is the better way of achieving the same task. Thanks a bunch in advance. Vishwa