durusmail: mems-talk: PECVD SiN at temperature 250℃
PECVD SiN at temperature 250℃
2007-01-02
Photolithography, baking temperature
2007-01-03
PECVD SiN at temperature 250℃
memser
2007-01-02
In our current project, we need to deposit a multilayer dielectric coatings
consisting of alternativing a-Si:H and a-SiNx:H layers. Generally, we deposit
them at 250℃ and 350℃ respectively with Oxford Plasma System 100,but now we need
to deposit a-SiNx:H with the same deposited temperature of a-Si:H (250℃). So I
really need  some electronic documents about optical and mechanical propertis of
of a-SiNx:H vs deposited conditions at 250℃. The stress of SiNx film should be
small and tensile.
 If possible, could any of you  give me some advices, or provide me deposited
conditions to achieve this structure?Such as: Gas
flow,Temperature,Pressure,HF/LF and so on.
Thank you very much!
Best wishes
                                       Yours sincerely
                                                   Xu Yan
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