Dear MEMS community,
   I am using Al Pad etchant to release a MEMS device in which a 3 micro LPCVD
SiO2 is used for sacrificial layer. My problem is the Al pad etchant attacked
the
Al pad at a rate about 1 nm/min. I need a release of 500 min to extremely remove
the sacrifical layer,and does anybody has better idea to protect the Pad? Thanks
in advance.

------------------------------
Sincerely yours,
Qiao-Da-Yong
Northwestern Polytechnical University
M/NEMS Lab.
P.O. Box 638, No.127 West FriendShip Road, Xi'an
P.R. China
ZipCode:710072
Tel£º86-029-88460353-8112
E-mail£ºdyqiao@nwpu.edu.cn