Hi Jay, At a guess, I would say this is predominantly due to the presence of grain boundaries. These are regions of high(er) energy, compared to the rest of the xtal structure, meaning GBs are more active/reactive, and more prone to oxidation (along with other chemical reactions with Si). O2 diffusion rates are probably also higher along GBs, due to the disorder in the regular xtal lattice, promoting more rapid oxidation. I would say that increased diffusion rates at GBs are the main reason for the increased oxidation rates Following the thermodynamic argument: GBs introduce disorder to the xtal structure, increasing its energetic state. Thermodynamics shows that all things in nature tend towards a state of lower energy, thus the poly-Si will strive to do this at any opportunity (and more so than SC Si). Oxidation is a mechanism by which the energy state of many systems are reduced (e.g. rust in metals). Regards, Michael > From: wanhong Cheung> To: mems-talk@memsnet.org > Date: Wed, 24 Jan 2007 08:45:43 -0800 (PST) > Subject: [mems-talk] Why oxidation rate of polysilicon is much higher than that of single-crystal silicon(100) > Dear Members, > > Can any one tell me why oxidation rate of polysilicon is much higher than that of single-crystal silicon(100) > > Thanks > > Jay