If the etch rate is really that important for you, you should really think about
calibrating it yourself. Any numbers you're likely to have quoted to you can
vary wildly depending on the exact conditions that these two layers were
deposited under, and the total surface area being etched.

- Kevin Nichols


-----Original Message-----
From: mems-talk-bounces@memsnet.org on behalf of Chin-Jen Chiang
Sent: Wed 12/5/2007 9:59 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] PAN etch rate for Al

Hi, guys,

  I have a 4000 A thickness aluminum layer deposited by e-beam. The Al layer is
covered by a 2600A thickness PEVCD nitride layer. I open an etching windown by
photolithography, etch the nitride away, and now is going to remove the un-
protected aluminum.

  In order not to laterally etch the nitride underneath the photoresist too much
as etching Al with PAN, I need to minimize the PAN etch time by knowing the etch
rate. Dose anyone by any chance know the PAN etch rate for Al and nitride? I
appreciate your comment. Thanks.

  Regards
  Lawrence